JPS6237554B2 - - Google Patents
Info
- Publication number
- JPS6237554B2 JPS6237554B2 JP16118378A JP16118378A JPS6237554B2 JP S6237554 B2 JPS6237554 B2 JP S6237554B2 JP 16118378 A JP16118378 A JP 16118378A JP 16118378 A JP16118378 A JP 16118378A JP S6237554 B2 JPS6237554 B2 JP S6237554B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- substrate
- diffusion layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 58
- 238000009792 diffusion process Methods 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 25
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910015367 Au—Sb Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16118378A JPS5591186A (en) | 1978-12-28 | 1978-12-28 | Light emitting diode display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16118378A JPS5591186A (en) | 1978-12-28 | 1978-12-28 | Light emitting diode display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5591186A JPS5591186A (en) | 1980-07-10 |
| JPS6237554B2 true JPS6237554B2 (en]) | 1987-08-13 |
Family
ID=15730156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16118378A Granted JPS5591186A (en) | 1978-12-28 | 1978-12-28 | Light emitting diode display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5591186A (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158758U (ja) * | 1984-03-31 | 1985-10-22 | パイオニア株式会社 | 発光表示素子 |
| JPH05110137A (ja) * | 1991-10-15 | 1993-04-30 | Shin Etsu Handotai Co Ltd | ＧａＰ赤色発光素子 |
| JP2004259836A (ja) * | 2003-02-25 | 2004-09-16 | Sony Corp | 受発光素子および光ヘッド並びに光ディスク装置 |
| JP4212939B2 (ja) | 2003-03-25 | 2009-01-21 | 富士通株式会社 | 機器の架構造体 |
-
1978
- 1978-12-28 JP JP16118378A patent/JPS5591186A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5591186A (en) | 1980-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4241281A (en) | Light emitting diode display device | |
| US4080245A (en) | Process for manufacturing a gallium phosphide electroluminescent device | |
| US3930912A (en) | Method of manufacturing light emitting diodes | |
| US3546542A (en) | Integrated high voltage solar cell panel | |
| US4182025A (en) | Manufacture of electroluminescent display devices | |
| JPS6237554B2 (en]) | ||
| JP3311946B2 (ja) | 発光ダイオードアレイ | |
| JPS6212916B2 (en]) | ||
| JP2000357818A (ja) | 発光素子およびその製造方法 | |
| JPH03190287A (ja) | 発光ダイオードアレイ | |
| JPH077846B2 (ja) | 発光素子の製造方法 | |
| JP3492862B2 (ja) | 発光ダイオードアレイの製造方法 | |
| JP2555305Y2 (ja) | 発光ダイオードアレイ | |
| JPS62207Y2 (en]) | ||
| JPH08186288A (ja) | 半導体発光素子 | |
| KR790000915B1 (ko) | 인화칼륨 발광소자의 제조방법 | |
| KR930010130B1 (ko) | 발광다이오드 어레이 및 그 제조방법 | |
| JP3506585B2 (ja) | 発光ダイオードアレイ | |
| JP2882133B2 (ja) | 固体発光素子 | |
| JPH0458714B2 (en]) | ||
| JPH07111866B2 (ja) | 固体電子ビ−ム発生装置 | |
| JPS6328510B2 (en]) | ||
| JPS592382A (ja) | 半導体発光装置 | |
| JPH05327013A (ja) | 発光ダイオードアレイ | |
| US20050227404A1 (en) | Manufacture of a semiconductor light-emitting device |